Patents of Paul R. Berger, Professor
- "Demonstration of Room Temperature Negative Differential
Resistance in Polymer Diodes Using a Thin Oxide Tunneling Barrier
at the Anode," Paul R. Berger and Woo-Jun Yoon, [Disclosure submitted
May 17, 2005; provisional filed November 3, 2005, full patent filed
November 3, 2006, Serial. No. & Code 11/592,419].
- "Silicon-based Backward Diodes for Zero-biased Square Law
Detection and Detector Arrays of Same," Paul R. Berger, Niu Jin,
and Phillip E. Thompson, [Disclosure submitted on July 7, 2004;
provisional filed April 19, 2005, full patent filed April 19,
2006, Serial. No. & Code 60/672,833 and 11/407,120].
- "Diffusion Barriers for Resonant Interband Tunnel Diodes,"
Paul R. Berger, Niu Jin, and Phillip E. Thompson
U. S. Patent #7,297, 990, Granted on November 20, 2007.
- Description: This invention comprises the addition ofd
SiGe cladding layers surrounding both sides of the B delta-doping
spike to effectively provide outdiffusio barriers leading to
better carrier confinement and higher thermal budgets.
- "Self-Aligned and Self-Limited Quantum Dot Nanoswitches and
Methods Making Same," Paul R. Berger, [Disclosure submitted on
November 2002; provisional filed August 2002; full patent filed
August 27, 2003].
U. S. Patent #7,015,497, Granted on March 21, 2006.
- Description: This invention uses the selective oxidation
of Si versus Ge to condense an oxidized SiGe 3D structure into a
quantum dot of a self-limiting size and which is self-aligned for
external electrical connections.
- One pending application to be filed by Cambridge Display
Technology on light emitting polymers during consulting services.
(July 17, 1999).
- "Covering," filed by Cambridge
Display Technology Limited in Great Britain (App. No. GB9928694.0),
Filed December 3, 1999.
- "Fibre Optic Device," ," Alec Gunner, Karl Stephen Heeks, Peter Devine,
Julian Charles Carter, George Bead, Richard O'Dell, Ian Millard and Paul Berger,
filed by Cambridge Display Technology Limited in Great Britain (App. No. GB9927594.3),
Filed November 22, 1999. Granted May 23, 2001, GB2356464.
- "Light Emitting Devices," Paul Raymond Berger and Stephen Karl Heeks,
filed by Cambridge Display Technology Limited in Great Britain
- Great Britain awarded ((Filed October 15, 1999, App. No. GB9924515.1, Filed October 12, 2000, GB0208403.6, Granted July 31, 2002, GB2371679)
- World Intellectual Property Organization awarded (WO0129909)
- Australian patent awarded (AU7803400)
- United States Patent Office (Filed on April 15, 2002, Publ. Appl. No. 20030193796)
- "Method of Producing Organic Light-Emissive Devices," Paul Raymond Berger and Stephen Karl Heeks,
filed by Cambridge Display Technology Limited in Great Britain
- Great Britain awarded (Filed June 11, 1999, App. No. GB9913695.4, Filed June 1, 2000, App. No. GB0200245.9, Granted April 10, 2002, GB2367692)
- World Intellectual Property Organization patent awarded (WO0076008)
- Australian patent awarded (AU4937300)
-
U. S. Patent # 6,878,297, Issued on April 12, 2005.
- "Display Devices," filed by Cambridge Display Technology
Limited in Great Britain
- Great Britain patent pending (App. No. GB9901334.4), Filed January 21, 1999, Priority Claimed December 8, 1998; "Display Devices," filed by Cambridge Display Technology Limited in Great Britain, App. No. GB9827014.3).
- World Intellectual Property Organization patent awarded (WO0035028)
- European Patent Office patent awarded (EP1147562)
- Australian patent awarded (AU1573500)
- Canadian patent awarded (CA2354139)
- "Patterned Organic Light-Emitting Device," filed by Cambridge
Display Technology Limited in Great Britain (App. No. GB9618476.7),
Filed September 4, 1996.
- "Method of Making Interband Tunneling Diodes," Paul R.
Berger, Sean L. Rommel, Phillip E. Thompson, Karl D. Hobart, and
Roger Lake,
U. S. Patent #7,303,969, Granted on December 4, 2007.
- Description: This invention comprises a novel tunnel diode
fabrication method suitable for convenient
implementation in integrated CMOS circuits as well as in Si/SiGe bipolar
integrated circuits. This is achieved in a manner that accomplishes
room temperature negative differential resistance, while
concurrently achieving a practically-usable peak-to-valley current ratio.
The resultant resonant interband tunnel diode is implemented with
standard planar integration processes and equipment.
- "Si-Based Resonant Interband Tunneling
Diodes and Method of Making Interband Tunneling Diodes," Paul R.
Berger, Sean L. Rommel, Phillip E. Thompson, Karl D. Hobart, and
Roger Lake,
U. S. Patent #6,803,598, Granted on October 12, 2004.
- Description: This invention comprises a novel tunnel diode
structure suitable for convenient
implementation in integrated CMOS circuits as well as in Si/SiGe bipolar
integrated circuits. This is achieved in a manner that accomplishes
room temperature negative differential resistance, while
concurrently achieving a practically-usable peak-to-valley current ratio.
The resultant resonant interband tunnel diode is implemented with
standard planar integration processes and equipment.
- "Asymmetric Contacted Metal-Semiconductor-Metal (MSM)
Photodetector,'' Paul R. Berger and Wei Gao,
U. S. Patent #5,780,916, Granted on July 14, 1998.
- "Transparent/Opaque Electrode Metal-Semiconductor-Metal (MSM)
Photodetector,'' Wei Gao and Paul R. Berger,
U. S. Patent #5,777,390, Granted on July 7, 1998.
- "InGaAs p-i-n Photodiodes with Transparent Cadmium Tin Oxide Contacts,"
Paul R. Berger, John Lopata, George Zydzik, Hank O'Bryan, Niloy K. Dutta,
D. Sivco, and Alfred Y. Cho,
U. S. Patent #5,212,395, Granted on May 18, 1993.
- "Buried Heterostructure Lasers Using a Single-step Metal Organic
Chemical Vapor Deposition Growth Over Patterned Substrates,"
John Lopata, Niloy K. Dutta, W. S. Hobson, and Paul R. Berger,
U. S. Patent #5,208,821, Granted on May 4 1993.
Return to
Paul R. Berger's Vitae page
Send suggestions or comments to
pberger@ieee.org.