Conference Presentations of Paul R. Berger, Professor

Invited Talks

  1. "Extending CMOS Using Tunneling Devices," Paul R. Berger, Frontier Science Research Conference in Materials Science and Technology in La Jolla, CA (2001).

  2. "Metal-Semiconductor-Metal Photodetectors," Paul R. Berger, SPIE's 2001 Photonics West in San Jose, CA (2001).

  3. "Epitaxial Si-Based Tunnel Diodes," Phillip E. Thompson, Karl D. Hobart, Mark E. Twigg, Sean L. Rommel, Niu Jin, Paul R. Berger, Roger Lake, Alan C. Seabaugh, Peter H. Chi, and David S. Simons, European Materials Research Society Spring Meeting in Strasbourg, France (May 30 - June 2, 2000).

  4. "Current Status of Si-based Tunnel Diodes," Paul R. Berger, SRC's Si Tunnel Diode and CMOS/HBT Integration Workshop in Washington, DC (1999).

  5. "Laser and Photoreceiver Arrays for Parallel Optical Data Link Applications," N. K. Dutta, and P. R. Berger, 181st Electrochemical Society Meeting in St. Louis, MO, (1992).

Conference Presentations

  1. "Analysis of the Biasing Conditions and Latching Operation for Si/SiGe Resonant Interband Tunnel Diode Based Tunneling SRAM," S. Sudirgo, D.J. Pawlik, S.L. Rommel, S.K. Kurinec, P.E. Thompson, and P.R. Berger, International Semiconductor Device Research Symposium in Bethesda, MD (December 7-9, 2005).

  2. "High Temperature Characterization of Si/SiGe Resonant Interband Tunnel Diodes," D.J. Pawlik, S. Sudirgo, S.K. Kurinec, P.E. Thompson, P.R. Berger, and S.L. Rommel, International Semiconductor Device Research Symposium in Bethesda, MD (December 7-9, 2005).

  3. "Monolithic Si/SiGe HBT-RITD Circuit with Controllable Negative Differential Resistance For Voltage Controlled Oscillator Applications," Sung-Yong Chung, Si-Young Park, Jeffrey W. Daulton, Ronghua Yu, Paul R. Berger, and Phillip E. Thompson, International Semiconductor Device Research Symposium in Bethesda, MD (December 7-9, 2005).

  4. "Si-based Resonant Interband Tunnel Diode with Cutoff Frequency over 20 GHz and Estimated Peak Current Density of 218 kA/cm2," Sung-Yong Chung, Ronghua Yu, Niu Jin, Si-Young Park, Paul R. Berger, Phillip E. Thompson, International Semiconductor Device Research Symposium in Bethesda, MD (December 7-9, 2005).

  5. "Low Sidewall Damage Plasma Etching with ICP-RIE and HBr Chemistry of Si/SiGe Resonant Interband Tunnel Diodes," Si-Young Park, Sung-Yong Chung, Ronghua Yu, Paul R. Berger, and Phillip E. Thompson, International Semiconductor Device Research Symposium in Bethesda, MD (December 7-9, 2005).

  6. "Enhanced Light Emission using Thin Metal-Halide Cathodic Interlayers for Improved Electron Injection into MEH-PPV Polymer Light Emitting Diodes," Woo-Jun Yoon, Scott B. Orlove, Robert L. Olmon, and Paul R. Berger, Fall 2005 MRS Meeting, Symposium I: Interfaces in Organic & Molecular Electronics II in Boston, MA (November 28 - December 2, 2005).

  7. "High-K Polymerized Dichlorotetramethyldisiloxane Films Deposited by Radio Frequency Pulsed Plasma for Gate Dielectrics in Flexible Polymer FETs," Yifan Xu, Paul R. Berger, Jai Cho and Richard B. Timmons, Spring 2005 MRS Meeting, Symposium I: Organic Thin-Film Electronics in San Francisco, CA (March 28 - April 1, 2005).

  8. "A Unified Model for Si-based Resonant Interband Tunneling Diodes Grown on SOI," Niu Jin, Sung-Yong Chung, Dongmin Liu, Wu Lu, Ronghua Yu, Paul R. Berger, and Phillip E. Thompson, 2004 Device Research Conference at Notre Dame, IN (June 2004).

  9. "Overgrown Si/SiGe Resonant Interband Tunnel Diodes for Integration with CMOS," Stephen Sudirgo, Reinaldo Vega, Rohit P. Nandgaonkar, Karl D. Hirschman, Sean L. Rommel, Santosh K. Kurinec, Phillip E. Thompson, Niu Jin, and Paul R. Berger, 2004 Device Research Conference at Notre Dame, IN (June 2004).

  10. "Multi-State Logic Using Vertically Integrated Si/SiGe Resonant Interband Tunneling Diodes," Niu Jin, Sung-Yong Chung, Roux M. Heyns, Paul R. Berger, Ronghua Yu, Phillip E. Thompson, and Sean L. Rommel, Second International SiGe Technology and Device Meeting (ISTDM 2004) in Frankfurt (Oder), Germany (May 16 - 19, 2004).

  11. "Light Sensitive Polymer Thin Film Transistors Based on BAS-PPE," Yifan Xu, Paul R. Berger, James N. Wilson and Uwe H.F. Bunz, Spring 2003 MRS Meeting, Symposium I: Flexible Electronics - Materials and Device Technology in San Francisco, CA (April 12-16, 2004).

  12. "Monolithically Integrated Si/SiGe Resonant Interband Tunneling Diodes/CMOS MOBILE Latch with High Voltage Swing," S. Sudirgo, R.P. Nandgaonkar, B. Curanovic, J. Hebding, K.D. Hirschman, S.S. Islam, S.L. Rommel, S.K. Kurinec, P.E. Thompson, N. Jin, and P.R. Berger, 2003 International Semiconductor Device Research Symposium in Washington, DC (December 10-12, 2003).

  13. "Monolithic Vertical Integration of Si/SiGe HBT and Si-Based Resonant Interband Tunneling Diode Demonstrating Latching Operation and Adjustable Peak-To-Valley Current Ratios," Sung-Yong Chung, Niu Jin, Ronghua Yu, Paul R. Berger, Phillip E. Thompson, Roger Lake, Sean L. Rommel and Santosh K. Kurinec, 2003 International Electron Devices in Washington, DC.

  14. "Challenges in Integration of Resonant Interband Tunnel Devices with CMOS," Stephen Sudirgo, Branislav Curanovic, Sean L. Rommel, Karl D. Hirschman, Santosh K. Kurinec, Niu Jin, Anthony T. Rice, Matthew T. Williams. Ling F. Kho, Sung-Yong Chung, Ronghua Yu, Paul R. Berger, and Phillip E. Thompson, The Fifthteenth Biennial University/Government/Industry Microelectronics Symposium in Boise, Idaho (June 30 - July 2, 2003).

  15. "30-nm Period Gratings in Hydrogen Silsesquioxane Resist Fabricated by Electron-Beam Lithography," M. J. Word, P. Berger,and I. Adesida, 2003 Electronic Materials Conference (EMC) in Salt Lake City, UT (June 2003).

  16. "MBE Growth Techniques to Form Si/SiGe Resonant Interband Tunneling Diodes with High Peak Current Densities and High Peak-to-Valley Current Ratios," Phillip E. Thompson, Niu Jin, Ronghua Yu, Sung-Yong Chung, Anthony T. Rice, Paul R. Berger, Roger Lake, Peter H. Chi and David S. Simons, 3rd International SiGeC Epitaxy and Heterostructures Conference in Santa Fe, NM (March 9-12, 2003)

  17. "C-V Characterization of Pulsed Plasma Polymerized Allylamine Dielectrics," Yifan Xu, Paul R. Berger, Jai Cho and Richard B. Timmons, Fall MRS Meeting in Boston, MA (December 2-6, 2002).

  18. "Growth Temperature Effects on Deep-Levels in Si Grown by Low Temperature Molecular Beam Epitaxy," Sung-Yong Chung, Paul R. Berger, Z-Q. Fang, and Phillip E. Thompson, Fall MRS Meeting in Boston, MA (December 2-6, 2002).

  19. "SiGe Diffusion Barriers for P-doped Si/SiGe Resonant Interband Tunnel Diodes," Niu Jin, Anthony T. Rice, Paul R. Berger, Phillip E. Thompson, Peter H. Chi and David S. Simons, IEEE Lester Eastman Conference on High Performance Device in Newark, DE (August 6-8, 2002).

  20. "Integration of Silicon-based Tunnel Diodes with CMOS: An RIT-OSU-NRL-NSF Effort," Jeremy J. Kempisty, Karl D. Hirschman, Santosh K. Kurinec, Niu Jin, Sung-Yong Chung, Paul R. Berger, Phillip E. Thompson, The Fourteenth Biennial University/Government/Industry Microelectronics Symposium, at Richmond, VA (June 17-20, 2001).

  21. "Understanding Growth at the Atomic Scale: Si-based RITDs," P. E. Thompson, G. G. Jernigan, M. E. Twigg, N. Jin, and P. R. Berger, March 2001 Meeting of the American Physical Society (March 12-16, 2001).

  22. "Development of Delta-B/i-Si/Delta-Sb and Delta-B/i-Si/Delta-Sb/i-Si/Delta-B Resonant Interband Tunnel Diodes For Integrated Circuit Applications," Sean L. Rommel, Niu Jin, T. E. Dillon, Sandro J. Di Giacomo, Joel Banyai, Bryan M. Cord, C. D'Imperio, D. J. Hancock, N. Kirpalani, V. Emanuele, Paul R. Berger, Phillip E. Thompson, Karl D. Hobart, and Roger Lake, 58th Annual Device Research Conference in Denver, CO (June 19-21, 2000). PDF (208 kB)

  23. "Si-Based Interband Tunneling Devices For High-Speed Logic and Low Power Memory Applications," Sean L. Rommel, Thomas E. Dillon, Paul R. Berger, Roger Lake, Phillip E. Thompson, Karl D. Hobart, Alan C. Seabaugh, and David S. Simons, Late News at the International Electron Devices in San Francisco, CA (December 6-9, 1998). PDF (468 kB)

  24. "Optically Interconnected Static-RAM," Dennis W. Prather, Paul R. Berger, Brian McMonagle, Richard Doyle, Michael L. Liccone, and Sean Rommel, SPIE's 1999 Photonics West in San Jose, CA, (1999).

  25. "Demonstration of Room Temperature NDR in Si0.5Ge0.5/Si Heterojunction Interband Tunneling Diodes Using Delta-doped Si Injectors," Sean L. Rommel, T. E. Dillon III, M. W. Dashiell, H. Feng, J. Kolodzey, Paul R. Berger, Phillip E. Thompson, K. D. Hobart, Roger Lake, and Alan Seabaugh, Late News at 1998 IEEE Silicon Nanoelectronics Workshop in Honolulu, HI, (June 7-8, 1998).

  26. "Photoluminesence of SiSnC Alloys Grown on (100) Si Substrates," Nareen Wright, Al-Sameen Khan, Paul R. Berger, Fernando J. Guarin, and Subramanian S. Iyer, 1998 Spring Meeting of the Materials Research Society in San Francisco, CA, (April 13-17, 1998).

  27. "Raman Study of GexCy Islands Grown on Si Substrates," H. Shen, J. Pamulapati, X. Shao, R. Jonczyk, B. A. Orner, A-S. Khan, K. Roe, J. Kolodzey, P. R. Berger, M. Barteau, and K. M. Unruh, 1997 Fall Meeting of the Materials Research Society in Boston, MA, (December 1-5, 1997).

  28. "Electrical and Optical Properties of Phosphorus Doped GeC," M. W. Dashiell, R. T. Troeger, L. V. Kulik, A-S. Khan, F. Chen, K. Roe, B. Orner, P. R. Berger, J. Kolodzey, and R. G. Wilson, Seventh International Symposium on Silicon Molecular Beam Epitaxy in Banff, Canada, (July 13-17, 1997).

  29. "Boron Diffusion in Si1-x-yGexCy Alloys Grown on a Silicon Substrate," Hao Feng, Mike Dashiell, B. A. Orner, J. Kolodzey, Paul R. Berger, Matthew H. Ervin, and Richard T. Lareau, 39th Electronic Materials Conference in Fort Colllins, CO, June 25-27 (1997).

  30. "Ordering of Si1-x-yGexCy Islands Grown on (100) and (311) Si Substrates," X. Shao, R. Jonczyk, M. Dashiell, D. Hits, B. A. Orner, A-S. Khan, L. Kulik, K. Roe, D. van der Weide, J. Kolodzey, P. R. Berger, M. Kaba, M. Barteau, and K. M. Unruh, 1997 Spring Meeting of the Materials Research Society in San Francisco, CA, March 31 - April 4 (1997).

  31. "Equivalent Circuit Modeling of MSM Photodiodes with Transparent Conductor Electrodes," Sean L. Rommel, David N. Erby, Wei Gao, Paul R. Berger, G. Zydzik, W. W. Rhodes, H. M. O'Bryan, D. Sivco, and A. Y. Cho, SPIE's Optoelectronics '97: Photodetectors: Materials and Devices II in San Jose, CA, February 8-14 (1997).

  32. "Ge1-xCx/Si Heterojunction Photodiode," Xiaoping Shao, S. L. Rommel, B. A. Orner, H. Feng, M. Dashiell, J. Kolodzey, and Paul R. Berger, SPIE's Optoelectronics '97: Silicon-Based Monolithic and Hybrid Optoelectronic Devices in San Jose, CA, February 8-14 (1997).

  33. "Near Band Edge Photoluminescence from Pseudomorphic Tensially Strained Si0.985C0.015 Alloy,'' Al-Sameen T. Khan, Paul R. Berger, Fernando J. Guarin, and Subramanian S. Iyer, 1996 Spring Meeting of the European Materials Research Society in Strasbourg, France, June 4-7 (1996).

  34. "Inverted, Substrate-Removed MSM and Schottky Diode Optical Detectors,'' S. M. Spaziani, K. Vaccaro, E. A. Martin, P. R. Berger, and J. P. Lorenzo, 8th International Conference on Indium Phosphide and Related Materials in Schwabish Gmund, Germany, April 21-25 (1996).

  35. "Photoluminescence of Ge1-xCx Alloys Grown on (100) Si Substrates,'' Al-Sameen T. Khan, Brad A. Orner, Paul R. Berger, James Kolodzey, Fernando J. Guarin, and Subramanian S. Iyer, 1996 Spring Meeting of the Materials Research Society in San Francisco, CA, April 8-12 (1996).

  36. "Structural and Electrical Characterization of Ge1-xCx Cubic Heterostructures on Si,'' Xiaoping Shao, S. L. Rommel, B. A. Orner, F. Chen, Paul R. Berger, and J. Kolodzey, Fernando J. Guarin, and Subramanian S. Iyer, 1996 Spring Meeting of the Materials Research Society in San Francisco, CA, April 8-12 (1996).

  37. "Structural and Optical Properties of SiGeCSn Alloys,'' Paul R. Berger, Workshop on Compound Semiconductor Materials and Devices in Santa Fe, NM, February 19-21 (1996).

  38. "Liquid Phase Epitaxial Growth Process of InGaAs on InP with Rare Earth Treatment," Wei Gao, Paul R. Berger, Robert G. Hunsperger, Matthew Ervin, Jagadeesh Pamulapati, Stephen Schauer, and Richard T. Lareau, SPIE's OE/LASE '96 International Symposium, Novel Optoelectronic Materials and Devices in San Jose, CA, January 27 - February 2 (1996).

  39. "Liquid Phase Epitaxial InGaAs on InP Using Rare-Earth Elements,'' Wei Gao, Paul R. Berger, Robert G. Hunsperger, and Jagadeesh Pamulapati, 8th IEEE Lasers and Electro-Optics Society Annual Meeting in San Francisco, CA, October 30 - November 2 (1995).

  40. "InGaAs Metal-Semiconductor-Metal Photodiodes with Transparent Schottky Contacts and Digital Superlattice Grading," Wei Gao, Paul R. Berger, Robert G. Hunsperger, George Zydzik, W. W. Rhodes, H. M. O'Bryan, D. Sivco, and A. Y. Cho, 15th North American Conference on Molecular Beam Epitaxy in College Park, MD, September 17-20 (1995).

  41. "Properties of Group IV - Carbon Alloys Grown on Si Substrates," D. Hits, B. A. Orner, F. Chen, A. Khan, X. Shao, M. McClory, M. A. Barteau, G. H. Watson, P. R. Berger, and J. Kolodzey, 15th North American Conference on Molecular Beam Epitaxy in College Park, MD, September 17-20 (1995).

  42. "Transparent Schottky Contacts on In0.52Al0.48As," Wei Gao, Paul R. Berger, Robert G. Hunsperger, George Zydzik, W. W. Rhodes, H. M. O'Bryan, D. Sivco, and A. Y. Cho, 37th Electronic Materials Conference in Charlottesville, VA, June 19-21 (1995).

  43. "Optical Properties of Ge1-yCy Alloys," B. Orner, A. Khan, D. Hits, F. Chen, K. Roe, J. Pickett, X. Shao, R. G. Wilson, P. Berger, and J. Kolodzey, 37th Electronic Materials Conference in Charlottesville, VA, June 19-21 (1995).

  44. "Optical and Electronic Properties of SiGeC Alloys Grown on Si Substrates," J. Kolodzey, P. Berger, B. Orner, D. Hits, F. Chen, A. Khan, X. Shao, M. M. Waite, S. Ismat Shah, and K. M. Unruh, 6th International Symposium on Silicon Molecular Beam Epitaxy, part of E-MRS in Strasbourg, France (May 1995).

  45. "High Responsivity MSM Photodetectors," Paul R. Berger, Workshop on Compound Semiconductor Materials and Devices in New Orleans, LA, February 20-22 (1995).

  46. "Photoluminescence and TEM of SiGeC Alloys," Paul R. Berger, Workshop on Compound Semiconductor Materials and Devices in New Orleans, LA, February 20-22 (1995).

  47. "Growth and Properties of Silicon Germanium Carbon Alloys," J. Kolodzey, P. A. O'Neil, S. Zhang, B. Orner, K. Roe, J. Pickett, D. Hits, F. Chen, P. Berger, A. Khan, X. Shao, S. I. Shah, M. Waite, C. P. Swann, and K. M. Unruh, 14th North American Conference on Molecular Beam Epitaxy in Urbana, IL, October 1994.

  48. "Long Wavelength Metal-Semiconductor-Metal Photodiodes with Transparent Cadmium Tin Oxide Schottky Contacts," Wei Gao, Al-Sameen Khan, Paul R. Berger, Robert Hunsperger, George Zydzik, H. M. O'Bryan, D. Sivco, and A. Y. Cho, IEEE/LEOS Summer Topical Meeting on Optoelectronic Materials Growth and Processing in Lake Tahoe, NV (1994).

  49. "Integrated Optical Receivers and Transmitters for Use in Wide-Bandwidth Optical Transmission Systems," D. T. Nichols, J. Lopata, W. S. Hobson, P. R. Berger, P. R. Smith, N. K. Dutta, D. L. Sivco, A. Y. Cho, Optical Fiber Communication Conference in San Jose, CA (1994).

  50. "10 GHz Bandwidth Monolithic pin-MODFET Photoreceiver," N. K. Dutta, J. Lopata, P. R. Berger, P. R. Smith, D. L. Sivco, and A. Y. Cho, Conference on Lasers and Electro-optics in Baltimore, MD (1993).

  51. "Eight-Element Linear Array Monolithic pin-MODFET Photoreceivers Using Molecular Beam Epitaxial Regrowth," Paul R. Berger, Niloy K. Dutta, Sheunn-Jyi Wang, Dexter A. Humphrey, Peter R. Smith, R. K. Montgomery, D. Sivco, and A. Y. Cho, Optical Fiber Communication Conference in San Jose, CA (1993).

  52. "Monolithic pin-MODFET Photoreceivers With Molecular Beam Epitaxial Regrowth," Paul R. Berger, Workshop on Compound Semiconductor Materials and Devices in Santa Monica, CA (1993).

  53. "Integrated Photoreceiver Array Using Molecular Beam Epitaxial Regrowth," Paul R. Berger, Dexter A. Humphrey, Peter R. Smith, R. K. Montgomery, Niloy K. Dutta, D. Sivco, and A. Y. Cho, 4th International Conference on Indium Phosphide and Related Materials in Newport, RI (1992).

  54. "An AlGaAs Base Double Heterojunction Bipolar Transistor Grown by Molecular Beam Epitaxy," Paul R. Berger, Naresh Chand, and Niloy K. Dutta, 11th Molecular Beam Epitaxy Workshop in Austin, TX (1991).

  55. "Effects of Substrate Tilting in Substantial Improvement of DC Performance of AlGaAs/GaAs NpN DHBTs Grown by MBE," Naresh Chand, Paul R. Berger, and Niloy K. Dutta, 49th Device Research Conference in Boulder, CO (1991).

  56. "In0.2Ga0.8As/GaAs Strained Quantum Well Lasers," Paul R. Berger, Niloy K. Dutta, John Lopata, and Naresh Chand, Conference on Lasers and Electro-optics in Baltimore, MD (1991).

  57. "Monolithically Peltier-cooled Vertical Cavity Surface Emitting Lasers," Paul R. Berger, Niloy K. Dutta, Kent D. Choquette, Ghulam Hasnain, and Naresh Chand, 179th Electrochemical Society Meeting on State-of-the-Art Program on Compound Semiconductors in Washington, DC (1991).

  58. "Excellent Uniformity, High Temperature Operation, Very Low Threshold Current Density (< 50 A cm-2) 0.98 - 1.0 micron InGaAs Strained QW Lasers and their Integration with GaAs Lasers," Naresh Chand, J. P. van der Ziel, P. R. Berger, E. E. Becker, and N. K. Dutta, 179th Electrochemical Society Meeting on State-of-the-Art Program on Compound Semiconductors in Washington, DC (1991).

  59. "Monolithically Integrated In0.53Ga0.47As/In0.52Al0.48As Front-End Photoreceivers Realized by Molecular Beam Epitaxy and Regrowth Techniques," R. Lai, P. R. Berger, P. Bhattacharya, Y. Zebda, W-Q. Li, and D. Pavlidis, Summer Topical Meeting on Integrated Optoelectronics in Monterey, CA (1990).

  60. "Growth Modes of (100) InxGa1-xAs Growth on GaAs Below Critical Thickness - Consequences for Pseudomorhic MODFET's," P. R. Berger, Y. C. Chen, Jasprit Singh, and P. Bhattacharya, 16th GaAs and Related Compounds Conference in Karuizawa, Japan (1989).

  61. "Growth Phenomena and Characteristics of Strained InxGa1-xAs on GaAs," J. Pamulapati, P. Berger, K. Chang, J. Oh, Y. Chen, J. Singh, P. Bhattacharya, and R. Gibala, 5th International Conference on Molecular Beam Epitaxy in Sapporo, Japan (1988).

  62. "Investigation of the Interface Region Produced by Molecular Beam Epitaxial Regrowth," D. Biswas, P. R. Berger, U. Das, J. E. Oh, and P. K. Bhattacharya, 30th Electronic Materials Conference in Boulder, CO (1988).

  63. "Nonlinear All-Optical Modulation in a GaAs/AlGaAs Multiple Quantum Well Vertical Directional Coupler," Yi Chen, Paul R. Berger, Pallab K. Bhattacharya, Jagadeesh Pamulapati, and G. C. Vezzoli, Conference on Lasers and Electro-optics in Anaheim, CA (1988).

  64. "In-Situ RHEED Studies to Understand the Dislocation Formation Process in Growth of InGaAs on GaAs," Paul R. Berger, Kevin Chang, Pallab K. Bhattacharya, Jasprit Singh, and K. K. Bajaj, Advances in Semiconductors and Superconductors: Physics and Device Applications in Newport Beach, CA (1988).

  65. "Dislocation Studies of Molecular Beam Hetero-Epitaxial Growth of Strained InGaAs on GaAs," Kevin Chang, John Mansfield, Ron Gibala, Paul R. Berger, Pallab K. Bhattacharya, and Jasprit Singh, TMS/AIME Annual Meeting in Phoenix, AZ (1988).

  66. "Molecular Beam Hetero-epitaxial Growth of InxGa1-xAs/InxAl1-xAs Multiquantum Wells on GaAs with In-situ RHEED Studies," Kevin Chang, Paul R. Berger, Pallab K. Bhattacharya, Jasprit Singh, D. Van Aiken, and R. Gibala, 29th Electronic Materials Conference in Santa Barbara, CA (1987).

  67. "TEM and RHEED Studies on MBE Growth of Strained InGaAs/GaAs," Kevin Chang, Paul R. Berger, Pallab K. Bhattacharya, Jasprit Singh, D. Van Aiken, and R. Gibala, American Physical Society Meeting in New York, NY (1987).

  68. "A Study of Strain Related Effects in the MBE Growth of InxGa1-xAs on GaAs Using RHEED," Paul R. Berger, Kevin Chang, Pallab K. Bhattacharya, and Jasprit Singh, 14th Physics and Chemistry of Semiconductor Interfaces Conference in Salt Lake City, Utah (1987).

  69. "Growth and Properties of In0.52Al0.48As/In0.53Ga0.47As, GaAs: In and InGaAs/GaAs Multilayers," F-Y. Juang, W-P. Hong, P. R. Berger, P. K. Bhattacharya, U. Das, and J. Singh, 4th International Conference on Molecular Beam Epitaxy in York, England (1986).

  70. "Deep Levels in Molecular Beam Epitaxial InxAl1-xAs/InP," W. P. Hong, S. Dhar, P. Berger, A. Chin, and P.K. Bhattacharya, 28th Electronic Materials Conference in Amherst, MA (1986).

  71. "Investigation of Molecular Beam Epitaxial In0.53Ga0.47As Regrown on Liquid Phase Epitaxial In0.53Ga0.47As/InP," Y. Nashimoto, S. Dhar, W.P. Hong, A. Chin, P. Berger, and P.K. Bhattacharya, 6th Molecular Beam Epitaxy Workshop in Minneapolis, MN (1985).

Last updated November 25, 2003.

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